Abstract
Strong visible photoluminescence (PL) has been observed in the hydrogenated amorphous silicon nitride (a-SiN x :H) films prepared by plasma-enhanced chemical vapor deposition (PECVD). With various temperatures annealing, the evolution of the structure and of the PL properties has been studied to explain the PL origin. With the disappearance of PL peak with respect to Si 0 (dangling bonds) at the higher annealing temperature, the intense PL peak shows an obvious blueshift. Accompanying with the blueshift, a new PL peak on the high-energy side, about 640 nm, has been observed in the spectra, and the appearance of the new PL peak has been discussed. In terms of the present results, the intense PL originates from the Si clusters embedded in the silicon nitride.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
