Abstract
The precipitation, dissolution, and reprecipitation processes of Al2Cu (θ phase) in Al-2 wt pct Cu thin films were studied. The films were characterized in the as-deposited condition, after annealing at 425 °C for 35 minutes, and after rapid thermal annealing (RTA) at 345 °C, 405 °C, and 472 °C. In the as-deposited samples, the precipitates had a fine even distribution throughout the thin film both at aluminum grain boundaries and within the aluminum grains. Annealing below the solvus temperature caused the grain boundary precipitates to grow and precipitates within the center of aluminum grains to diminish. Annealing above 425 °C caused the θ-phase precipitates to dissolve. Upon cooldown, the θ phase nucleated at aluminum grain boundaries and triple points in the form of plates.In situ heating and cooling experiments documented this process in real time. Analytical microscopy revealed that there is a depletion of copper at the aluminum grain boundaries in regions free of precipitates. The θ-phase precipitates nucleated and grew at the grain boundariesvia a collector plate mechanism and drew copper from the areas adjacent to the aluminum grain boundaries.
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