Abstract
Direct printing techniques can provide a shorter manufacturing time, lower cost, and greater environmental friendliness compared to conventional photolithography. The electrical and mechanical characteristics of directly printed films are determined by their microstructure. This research focuses on the microstructural evolution of silver (Ag) thin films screen-printed onto a silicon (Si) wafer passivated with SiO2. To investigate the effect of heat treatment on the microstructure of the thin film, various sintering conditions were used: temperatures of 150°C, 200°C, 250°C, and 300°C, atmospheres of air, vacuum, N2, and Ar and rates of increase of temperature of 10°C/min, 20°C/min, 30°C/min, 40°C/min, and 50°C/min. Each parameter plays an important role in determining the density and microstructural evolution, which affect the densification of and void distribution inside the thin film. The electrical resistivity of the Ag thin film was measured by a four-point probe method. The oxygen concentration profiles on the Ag film surface were investigated using Auger electron spectroscopy (AES). The film sintered in air showed the highest oxygen concentration. At higher sintering temperatures, the film showed a denser microstructural evolution and void growth resulting in a lower electrical resistivity of 2.88 µΩ·cm.
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