Abstract
The differential Hall effect CAOT permits rapid, accurate measurements of mobility, resistivity, and carrier concentration. This permits us to extract defect scattering contributions to the mobility for comparison of doping and annealing techniques. The co-implantation of C with P was evaluated and showed that besides restricting the diffusion of P, the carrier concentration was significantly reduced. The application of DHE CAOT to the evaluation of doped polysilicon films permitted the evaluation of carrier concentration and mobility profiles. The latter has been correlated to grain size.
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