Abstract

The differential Hall effect CAOT permits rapid accurate measurement of mobility, resistivity, and carrier concentration. For single crystal structures with carrier concentrations less than 1E20 B cm−3 the resistivity‐carrier concentration tracks the A.S.T.M. F‐723 algorithm relationship. Above ∼1E20 B cm−3, a scattering defect mobility component is added to the phononic and coulombic components. This component is significantly greater for beamline implantation than for plasma doping for both single crystal junctions and polysilicon films.

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