The evaluation of growth dynamics in MBE using electron diffraction

Abstract

Reflection high energy electron diffraction (RHEED) has proved to be a very versatile technique for growth and surface studies of epitaxial metal and semiconductor thin films prepared by molecular beam epitaxy (MBE). The combination of the forward scattering geometry of RHEED with the near-normal incidence of the atomic and molecular beams on to the substrate enables diffraction features to be monitored continuously during growth. This paper is concerned with the application of RHEED intensity measurements, especially temporal oscillations, to the study of growth dynamics in MBE, with particular emphasis on III–V compound semiconductors.