Abstract
There is a high demand for plasma-resistant coatings that prevent the corrosion of the internal ceramic components of plasma etching equipment, thereby reducing particle contamination and process drift. Yttrium oxyfluoride (YOF) coatings were prepared using atmospheric plasma spraying (APS) with commercially available YOF/YF3 powder mixtures; namely YOF 3%, YOF 6%, and YOF 9%. The etching behaviour of YOF and yttrium oxide (Y2O3) coatings was investigated using an inductively coupled plasma consisting of NF3/He. X-ray photoelectron spectroscopy (XPS) showed that the YOF 6% coating had the thickest fluorinated layer. The scanning electron microscope (SEM) examination revealed that the YOF 6% coating showed exceptional resistance to erosion and generated a reduced quantity of contaminated particles in comparison to Y2O3. Consequently, it is more suitable as a protective material for the inner wall of reactors. The YOF coatings exhibit excellent stability and high resistance to erosion, indicating their appropriateness for use in the semiconductor industry.
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