Abstract
Yttrium oxide (Y2O3) and yttrium oxyfluoride (YO0.6F2.1) protective coatings were prepared by an atmospheric plasma spraying technique. The coatings were exposed to a NF3 plasma. After the NF3 plasma treatment, the mass loss of the coatings showed that the etching rate of YO0.6F2.1 was larger than that of the Y2O3. X-ray photoelectron spectroscopy revealed that YO0.5F1.9 was present in the Y2O3 coating, whereas YO0.4F2.2 was present in the YO0.6F2.1 coating. Transmission electron microscope analysis conducted on contamination particles generated during the plasma etching showed that both coatings were mainly composed of YFx. The contamination particles estimated by in-situ particle monitoring sensor revealed that the YO0.6F2.1 compared with the Y2O3 coatings produced 65% fewer contamination particles.
Highlights
IntroductionPlasmas are widely used for etching and cleaning in the semiconductor and display industries
Plasmas are widely used for etching and cleaning in the semiconductor and display industries.Ceramic parts such as electrodes, shower heads, liners, and focusing rings used in these processes are exposed to the plasma
We exposed Y2 O3 and YO0.6 F2.1 coatings prepared by atmospheric plasma spraying (APS) to
Summary
Plasmas are widely used for etching and cleaning in the semiconductor and display industries Ceramic parts such as electrodes, shower heads, liners, and focusing rings used in these processes are exposed to the plasma. The etching characteristics of fluorocarbon gases, such as CF4 and C2 F6 , have been widely studied Etching with these gases is often accompanied by the formation of an unnecessary fluorocarbon polymer layer; NF3 gas is used as an alternative to fluorocarbon gases. There have been no studies on the corrosion behavior of the yttrium-based materials or contamination particles generated from them in NF3 plasmas. We examine and compare the etching behavior and the generation of contamination particles in an NF3 plasma from Y2 O3 and YO0.6 F2.1 coatings, fabricated by atmospheric plasma spraying (APS).
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