Abstract
Abstract Single-crystal films of cobalt are grown by evaporation in ultra-high vacuum onto (001) copper substrates held at temperatures between 250°C and 350°C. It is found that the first misfit dislocations appear in the Cu-Co interface when the cobalt film is 13, A thick. Although thicker films are no longer pseudomorphic, the mean strain in the cobalt is still much greater than the equilibrium value predicted by existing theory. A previously established mechanism for the generation of misfit dislocations is used to estimate the magnitude of this discrepancy between the theoretical and measured strains. It is suggested that the existence of large residual strains is inevitable in any film which initially grows as a continuous pseudomorphic layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
