Abstract
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO2 surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.
Highlights
One-dimensional (1D) nanomaterials have stimulated great interest due to their importance in basic academic research and potential technology applications [1,2]
We demonstrated the feasibility of producing lateral silicon nanowires (SiNWs) in ultrahigh vacuum (UHV) by electron beam evaporation (EBE) through both VLS and oxide-assisted growth (OAG) mechanisms
Large-scale SiNWs were successfully prepared by EBE in UHV through both VLS and OAG mechanisms
Summary
One-dimensional (1D) nanomaterials have stimulated great interest due to their importance in basic academic research and potential technology applications [1,2]. It is widely accepted that 1D nanomaterials play vital roles as interconnects and functional units for nanodevices, and provide opportunities to investigate the dependence of electrical, thermal, and mechanical properties on the dimensionality and size reduction [2,3,4]. Among all 1D nanomaterials, silicon nanowires (SiNWs) are attractive [5,6,7,8,9] because of the center role of silicon (Si) in semiconductor industry. Synthesis of SiNWs in ultrahigh vacuum (UHV) is helpful for obtaining highly pure products, as well as better evaluating their properties and understanding the related mechanisms. The growth of SiNWs in UHV has attracted considerable attention recently [13,14,15,16]
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