Abstract

The structure and processing of epitaxial silicon diode array targets for vidicon camera tubes are described with emphasis on the way they differ from conventional silicon diode array targets. These targets, called Epicon <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">™</sup> vidicon targets, are generally similar to other silicon vidicon targets, but have the p-type boron diffused islands replaced by pyramidal or mesa-like structures that extend through the oxide apertures and up and over the oxide. The target is a self-registered conducting cap-type structure and does not require a resistive sea for its operation. It has some additional advantages in its structure and its processing over the other silicon diode array target. A comparison of the results of some selective epitaxy processes is briefly made. Some of the operating characteristics of the tube are described.

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