Electron beam accessed silicon diode arrays for image sensing applications

Abstract

A planar array of reverse biased silicon p-n diodes has been used as the image sensing element in a television camera tube. The optical image is focused onto the n-type substrate which is laterally homogeneous with a thickness typically in the rankle of 0.5 to 1.5 mils while the diode side is scanned by an electron beam, the electron optics being similar to that used in a conventional vidicon. Compared to the evaporated thin film photoconductive type of target used in the vidicon, the silicon diode array target has the following advantages: 1. It does not suffer from electron beam and optical burn-in. 2. There is no photoconductive lag. 3. A high temperature bake can be used during vacuum processing. 4. It has a broader spectral response and a higher sensitivity.