Abstract
Ferroelectric random access memories (FRAMs) are nonvolatile memory devices that store data by using the bistable switchable polarization state of a ferroelectric material. Ferroelectric thin films exhibit the hysteresis effect of polarization versus applied electrical field (P-E hysteresis loop) to realize its nonvolatile storage capability. FRAM is also known for its high endurance, a fast write speed, and low power consumption. Endurance is defined as the ability of the device to sustain switchable polarization after many switching cycles. It is one of the critical performance characteristics for FRAM applications. Due to the high endurance of FRAM devices, evaluating the endurance behavior in a reasonable amount of time becomes difficult
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