The electronic transport characteristics in wide band-gap nitrogen vacancy diamond/Si hetero-structure using Raman spectrum

Abstract

Abstract The negative charged nitrogen vacancy center in diamond is ideal sensitive detectors for quantum measure applications. Raman active phonon and inelastic light scattering in face-centered cubic diamond/Si(1 0 0) films were primarily studies by Raman spectra in various scattering configurations and NV concentration. The fabricated diamond (1 0 0) thin films were successfully epitaxial grown on Si(1 0 0) substrate using MPCVD. The Raman scattering spectrum of diamond/Si(1 0 0) hetero-structure with different thickness nanostructure is present to investigate spin orbital transport dynamics of phase transition. Diamond hetero-junction experiments were carried out at different conditions such as temperature range of 15–300 K and concentration of NV. The results show a strong peak at 1332 cm−1 of D mode indicates the E2g of diamond, as well as the peak 1550 cm−1 of a broad band F2g symmetry G mode which corresponds to the nano-diamond. The disordered graphitic carbon is formed by disordered SP2 hybridization. The 1132 cm−1 and 1480 cm−1 are corresponding with hydrogen bonding within film grain boundaries. The transfer of diamond sp2 content extracted from C C peak and converted to the sp3 spin related effect. The diamond/Si(1 0 0) PDOS indicated the spin-related couple of SP3, and p and d orbital hybridization. The research leads to a better understanding of the Raman active spectra and inelastic light scattering of diamond/Si(1 0 0) films and offers guidelines for better orbital hybridization material design in deep ultra-violet photo-sensor, gyroscopes, field effect transistors (FET) using diamond hetero-structure and high-k oxide gate structure, magnetometer, thermometer, and optical switching micro-electromechanical system (MEMS) devices.