The electronic structures and optical gain of dilute nitride GaAs nanowires under uniaxial stress

Abstract

The optical gain spectra of GaAs1−xNx nanowires under uniaxial stress are calculated via 10-band k · p theory. We find the TM gain value can be enhanced greatly, while the TE gain value is almost vanished under the compressive uniaxial stress whether the radius R is 6 or 9 nm, which is mainly due to the change of the components in hole states. Our results show that GaAs1−xNx nanowires with large radius can be realized as TM linearly polarized lasers by applying the compressive uniaxial stress. Further, the radiative current density as a function of the uniaxial stress is studied.