Abstract
The dependency of the low field electron mobilities of Hg0.78Cd0.22Te and Hg0.7Cd0.3Te structures to doping and temperature are calculated by using the iterative method in the thermal range of 75−300 K. we have examined the mobility of In-doped and annealed samples of Hg0.78Cd0.22Te and Hg0.7Cd0.3Te structures. The effect of annealing in the atmospheric pressure of Hg at 150 K and for 10 h on the mobility of Hg0.78Cd0.22Te was better than Hg0.7Cd0.3Te. In order to validate the computational results, we have compared them with the measured mobility results. Observed discrepancies between theoretical and experimental data was obtained 3% and 5% for x = 0.22 and 0.3 respectively at temperature 300 K. It indicated that the iterative method for low compensated Hg0.78Cd0.22Te and Hg0.7Cd0.3Te can be an applicable model for mobility estimation especially for temperatures above 150 K.
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