Abstract
We report on the analysis of the electrical properties of Schottky barrier diode structures based on gallium oxide (Ga2O3). Ga2O3 has been grown by chloride-hydride vapor phase epitaxy on Al2O3 substrate. Samples with different amounts of Sn impurity are experimentally characterized. Surface and cross-sectional scanning electron microscopy images, X-ray diffraction patterns and current-voltage characteristics of Ga2O3 layers both with and without contact pads are presented. The value of the Ga2O3 optimal doping is determined and the parameters of the surface treatment that is performed before the contact pads deposition are established.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
