Abstract
Abstract The van der Pauw technique has been used to make measurements of the electrical resistance, Hall mobility and carrier concentration of ion-implanted lead telluride at 77 K. Small changes in the electrical properties were observed for relatively large changes in the implantation parameters. A previously unreported room temperature annealing process was found to produce large increases in carrier concentration in samples bombarded with protons of low energy (∼50 keV). This annealing effect appears to be due to the loss of lead vacancies by migration out of the bombarded region to either the surface or the bulk of the sample.
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