The electrical properties and band structure of doped LaInO 3

Abstract

Theoretical arguments suggest that LaInO 3 might be a narrow-band semiconductor rather than an ionic insulator. Experimental measurements of resistivity show that at lower temperatures the doped material behaves like a p-type extrinsic semiconductor, and at higher temperatures, like an intrinsic material with a gap energy of 2.2 eV. The Seebeck coefficient changes from positive to negative values with rising temperature slightly above the range of temperature in which the system shifts from the extrinsic to the intrinsic regime. These findings are interpreted in terms of an elementary band model.