Abstract

An investigation was carried out of the electron conductivity as a function of the partial oxygen pressure of solid solutions of TiO2 inα-Al2O3 over the temperature range 1100–1400°C at low partial oxygen pressures (10−8−10−18 atm). Up to 1100°C the predominant types of defect are once only ionized impurity centers Ti+(Al) and electrons in the conductivity zone. At higher temperatures the main type of defect takes the form of once only ionized impurity centers, oxygen vacancies, and electrons in the conductivity zone.

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