Abstract
The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at <TEX>$.019{\Omega}cm^2$</TEX> which shows that by the temperature resistance increasing, the power module's power dissipation improved.
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