The Electrical Characteristics and the Interface State Densities of Al/p-Si Structures with and Without the GO Insulator Layer

Abstract

Introduction: The current-voltage (I-V) characteristics of the Al/p-type Si metal-semiconductor (MS) and Al/GO/p-type Si metal-oxide-semiconductor (MOS) structure was investigated at room temperature (300 K). Methods: The main electrical characteristics such as ideality factor (n), zero-bias barrier height (bo) and series resistance (RS) of Al/p-Si and Al/GO/p-type Si semiconductor structure obtained from different methods using I−V measurements Results: Experimental results show that the electrical properties obtained from Al/GO/p-type Si structure are I-V measurements generally slightly greater than those obtained from Al/p-type Si structure. Conclusion: However, the interface state densities resistance values obtained from Al/GO/p-Si structure are generally slightly smaller than those obtained from Al/p-type Si structure. The interface states (NSS) as energy distribution functions (ESS-EV) was obtained by using I-V measurements for both Al/p-type Si and Al/GO/p-type Si structure.