Effect of perylenetetracarboxylic dianhydride on the main electrical properties and interface states of Al/p-Si structures

Abstract

In this our study, we were examined role on the electrical characteristics and interface state densities of Al/p-type Si metal semiconductor (MS) structures of perylenetetracarboxylic dianhydride (PTCDA) used at the interface as a thin film layer. The PTCDA thin film layer was coated on p-type Si by Spin Coating method. The main electrical characteristics such as ideality factors (n), barrier height (Φbo), series resistances (RS), and interface states of Al/p-type Si and Al/PTCDA/p-type Si devices were calculated using current–voltage (I–V) and capacitance–voltage (C–V) characteristics at the room temperature. The values of n, Φbo, RS which basic electrical parameters were calculated and compared with each other using different calculation methods such as Cheung and Norde methods. Additionally, the interface state densities (NSS) as a function of energy distributions (ESS-EV) were calculated from the I–V measurements by accounting for the bias dependence of the effective barrier heights (Φe) and ideality factor n(V). The experimental results showed that while the evaluated values of NSS has increased exponentially from 1.56x1015 cm−2eV−1 in (0.730- EV) eV to 3.09x1015 cm−2eV−1 in (0.501- EV) eV for Al/p-Si Structure, the NSS has increased exponentially with bias from of 2.05x1015 cm−2eV−1 to 6.50x1015 cm−2eV−1 for Al/PTCDA/p-Si structure in the same interval. As conclusions, we can say that PTCDA thin film layer play important roles on the electrical characteristics and interface state densities of metal semiconductor (MS) structures such as Al/p-type Si.