Abstract
Metal-ferroelectric-insulator-silicon diodes with Bi3.15Nd0.85Ti3O12 (BNT) as the ferroelectric layer and Y2O3-stabilized ZrO2 (YSZ) as the insulating buffer layer have been fabricated. Measurements revealed that the memory window of the fabricated diode reduces with increasing operating temperature, which is due to the decrease of coercive field and polarization of the BNT film. The diode demonstrates excellent retention and fatigue characteristics because of the good interface and high barrier height of YSZ/Si. In addition, the switching of the diode corresponds to an approximate constant-current process, and the complete switching time displays an obvious decrease as the gate voltage increases.
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