The EhpH diagram of the PbSH 2O systems and its correlation with lattice imperfection and electronic charge carriers in Pbs

Abstract

Partial pressure of sulphur is an important factor in the equilibria of metal-sulphide systems, and also in the preparation of metal-sulphide semiconductors. The EhpH diagram for the PbS-H 2O system at 100 ° C was constructed and isobaric curves were introduced. From reported data on the correlation between the carrier concentration in semiconducting PbS and the partial pressure of sulphur at high temperatures, the correlation at 100° C was estimated by extrapolation. The carrier concentration was then displayed on the diagram, in the stable region of PbS, taking into account the isobaric curves. It was shown that the PbS region involved both p- and n-type regions. The variation of carrier concentration was shown as a function of Eh and pH for boundaries of the PbS region, and methods for controlling the carrier concentration in PbS were discussed. The time required to equilibrate PbS with a gaseous phase at 100° C was also estimated from the date. The estimated time was about 3.3 days for a thickness 10 μm of PbS.