Abstract
The results of resistivity and Hall effect measurements performed on epitaxial GaAs grown on (Ca,Sr)F 2 are reported. The variations of carrier concentration and mobility as a function of the distance to the semiconductor-dielectric interface and the variations of carrier mobility versus carrier concentration are studied for n- and p-type layers. Mobilities ranging from 50 to 90% of the values for bulk GaAs have been obtained for 5×10 17< n<2×10 18 cm -3 and for 2×10 18< p<2×10 19 cm -3.
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