Abstract
Electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition using triethylindium (TEI) and phosphine (PH3) are described. It was found that the net ionized impurity concentration shows a monotonic decrease as the PH3/TEI ratio increases. Similarly, the electron mobility and the photoluminescent intensity increases with the PH3/TEI ratio. The effect of growth temperature has also been investigated in the range from 500 to 650°C. For a variety of PH3/TEI ratios, the optimal growth temperature is in the range of 550×600eC. In terms of impurities, the dominant shallow acceptors are Zn and possibly C, and the most common deep acceptor is Mn. The best material obtained shows a net electron concentration of 1 × 1015 cm−3 with an associated 77K electron mobility of 41,000 cm2 /Vsec, implying that the total ionized,impurity concentration is in the range of 3'4 □ 1015 cm−3
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