Abstract
The effects of uniaxial compressive stress on the terahertz electroluminescence from P-doped silicon devices have been studied. A shift by ∼0.5THz in the emission peaks of donor state transitions: 2p0→1s(E) and 3p+∕−→1s(E) has been observed for a stress of ∼0.1GPa along the [100] direction. Transitions from excited states to the strain split states of 1s(E) showed a pronounced polarization effect. Transitions involving the 1s(T1) ground state, however, showed no polarization effect. These results suggest that it may be possible to realize a tunable impurity-doped silicon terahertz emitter by externally applied stress.
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