Abstract
The current voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-Si (111) Schottky diode are measured over wide temperature. The measured I-V data is fitted into thermionic emission diffusion (TED) equation. The temperature dependence of the barrier height and ideality factor are analyzed to understand the current transport mechanism in the Schottky diodes. The temperature dependence of barrier height is also measured from C-V characteristics.
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