The effects of temperature and crystal defects on electron channeling radiation

Abstract

Channeling radiation from relativistic electrons has been studied by several groups in the past few years, and the basic mechanism is understood. There are, however, a number of areas remaining to be explored. Bound-state population lengths, which are determined by non-radiative transitions, are much longer than coherence lengths, resulting in radiation intensities appreciably greater than initially expected. Experimental results have been obtained which demonstrate this effect. Also, the temperature dependence of channeling radiation from Si has been measured recently. In addition, experiments have been performed on Si and diamond crystals with defects, to determine the effect of crystalline imperfections upon channeling radiation.