Abstract
Power MOSFETs are a commonly used device for many switching and power control applications. Their upper frequency limit spans a fairly broad range, from 1 MHz to 10 MHz. These devices are frequently used in spaceborne electronic systems where they encounter radiation exposure during operation. This paper reviews the current technology, its high frequency capability, the future trends for power MOSFET technology, and the degradation that the power VDMOS technology experiences in the space radiation environment.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of High Speed Electronics and Systems
Paper Title
Journal
Date
