Abstract

The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call