Abstract
0.94BaTiO3–0.06Bi(Mg0.5Ce0.5)O3 + xwt.% SiO2 ceramics with 0 ≤ x ≤ 2 were synthesized via a solid-state reaction route. The secondary phase (Ba2TiSi2O8) was obtained in the XRD result of the sample 0.94BT –0.06BMC + 2 wt.% SiO2. At x = 1, this ceramic displayed a high εr (∼1843), small Δεr/εr25°C values (≤±15 %) in the temperature range 25 to 150 ℃, and low tanδ (≤0.03) in the temperature range 25 to 350 ℃. A decent energy storage density (Ws = 2.089 J cm−3), recoverable energy density (Wrec = 1.035 J cm−3), and high dielectric breakdown strength (BDS = 285 kV cm−1) were achieved for the sample 0.94BT –0.06BMC + 1 wt.% SiO2. The decrease in bulk resistance with an increase in temperature exhibited negative temperature coefficient of resistance (NTCR) behavior. The fine grain morphology of the ceramic with the composition 0.94BT –0.06BMC + 1 wt.% SiO2 improves the Ea (2.08 eV) and BDS (285 kV cm−1).
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