Abstract
ABSTRACTSilicon dioxide was plasma-deposited at 300C using either the reaction of silane and nitrous oxide or the reaction of tetraethylorthosilicate with oxygen. The structural and electronic properties of films produced by both reactions were studied as functions of post-deposition heat treatments. The former reaction produced films which were more dense and less conductive than the latter. A model was developed to determine the amount and location of charge in the deposited films. The charge was found to be dependent on the reaction and the post-deposition anneal.
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