Abstract
Amorphous silicon carbide films were deposited by the r.f. sputtering technique using a SiC target. The deposited films were annealed in dry oxygen ambient in the temperature range of 400–700 °C. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
