Abstract
Nodular colloidal silica is proposed to be used as a consumable material for the chemical mechanical polishing (CMP). The typical spherical colloidal silica slurry is effective in decreasing both the defect level and the surface roughness of the semiconductor interlayer dielectric (ILD) film during CMP, but the removal rate is also decreased. Hence, the nodular colloidal silica slurry has been developed for the purpose of improving the removal rate of silicon substrate. A few of particles of the nodular colloidal silica slurry are associated with the active porous surface. The surface characteristics of the silica particles are considered to affect the removal rate of the plasma-tetra-ethoxy-silane (p-TEOS) interlayer dielectric film. In particular in the acidic condition, the nodular colloidal silica slurry yields a high removal rate with p-TEOS film, while in the alkaline condition, it yields a lower removal rate due to the surface morphology change. These CMP performances are recognized to depend on the different characteristics between the spherical colloidal and fumed silica.
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