Abstract
The thermoelectric properties of iodine-doped compounds Zn 4(Sb 1− x I x ) 3 ( x = 0 , 0.005, 0.01, 0.015) have been studied at temperatures from 5 to 310 K. The results indicate that the low-temperature ( T < 300 K ) thermal conductivity λ of moderately doped Zn 4(Sb 0.995I 0.005) 3 reduced remarkably as compared with that of Zn 4Sb 3 due to the enhanced impurity (dopant) scattering of phonons. The electrical resistivity and Seebeck coefficient were found to increase monotonically with the increase in the iodine content, which would reflect the decrease in carrier concentration due to the substitution of I for Sb. Moreover, the lightly doped compound Zn 4(Sb 0.995I 0.005) 3 exhibited the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, was about 1.2 times larger than that of β - Zn 4Sb 3 obtained in the present study at 300 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
