Abstract
In this study, we initially made ohmic contacts on two pieces n-InP crystals with In metal. Then In2S3 thin films, which are grown with changed growth parameters, have been directly grown on n-InP substrate by using chemical spray pyrolysis (CSP) method at 300∘C substrate temperature. The morphology, topology and elemental analysis of In2S3 thin films grown by different parameters, investigated by AFM, SEM and EDX techniques. Then Au contact metal diameter of about 1.0mm evaporated on the In2S3 thin film by mask at about 10-5 Torr. The Current-Voltage (I-V) and Capacity-Voltage (C-V) characteristics of Au/In2S3/n-InP/In junctions which have different growth parameters were measured and compared at room temperature. Some electrical parameters such as ideality factor n, zero bias barrier height ΦB and series resistance RS were extracted from I-V curves using Thermionic Emission (TE) and modified Norde methods. It is observed that the barrier height decreases and the leakage current increases with the increasing In2S3 thin films growth process time. From the C-V measurement of two different junctions’ ΦB(CV), donor concentration (ND), Fermi level (EF) and diffusion potential (VD) have been calculated and compared at 1,000kHz applied frequency.
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