Abstract
The effects of adding , NO, and on the chemical vapor deposition (CVD) of from were studied using a hot‐wall type tubular reactor operated at a temperature of 873 K. Without additives, rough films with poor step coverage were obtained. Adding and resulted in clear films with good step coverage. However, adding NO did not improve the quality of the film or of the step coverage. Numerical simulations of the gas‐phase elementary reaction kinetics of the reaction system were made for the same conditions as the experiments. The simulations show rapid conversion (i.e., within 0.007 s) of into , resulting in high concentrations of , which might form clusters that deposit to form rough films. Numerical simulations including , NO, and showed that and reduced the gas‐phase reaction rate and that NO did not affect it. These numerical results agree with our experimental results and show that simulations of gas‐phase, elementary chemical reactions are sufficiently accurate to reproduce the behavior of some aspects of CVD processes.
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