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Abstract
Adsorbates in TiN chemical vapor deposition (CVD) using the TiCl4NH3 gas system are studied by the macro/microcavity method. At least, two types of adsorbates are found, which contribute to TiN growth. One is a slightly reactive molecule, which is considered to be the source gas itself. When it is the main reactant, good quality step coverage is obtained and a large number of Cl atoms remain in the grown film. The other is a radical, produced by the thermal decomposition of the slightly active molecule in the gas phase. Its large sticking coefficient causes poor step coverage and the amount of residual Cl atoms remaining in the film is relatively small. The ratio of the amount of these adsorbates on the film surface depends on the TiCl4 gas flow rate. This flow rate affects the growth rate, the amount of residual Cl in the grown film, and step coverage quality.
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