Abstract
The Al(Ga)InAs metamorphic buffers grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrates with miscut angles toward (111)A exhibit anisotropic properties in the two directions. The dislocation distributions of samples were examined using X-ray rocking curve along two orthogonal directions and the measurement results suggested that Ga incorporation can reduce the density of α dislocation. There is an inflection point of substrate miscut above which the type of higher dislocation density switched from α to β types, while Ga incorporation can change the location of the inflection point.
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