Abstract
The metamorphic GaInAs/AlInAs buffers grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrates with miscut angles toward (111)A exhibit anisotropic properties in the two 〈110〉 directions. A higher dislocation density is observed along [110] direction for samples with substrate miscuts of 2° and 7°, while along [1−10] direction for samples with a substrate miscut of 15°. The different nucleation energies and glide velocities of α and β dislocations contribute to the anisotropic dislocation distribution for the 2° and 7° samples, however, the unequal resolved shear stress (RSS) distribution between different slip systems introduced by the miscut is responsible for the 15° sample. A modified model is proposed to determine the tilt angle of epilayer with respect to the substrates, and the results show that different tilt angles in the two 〈110〉 directions is mainly attributed to the different strain relaxation in two 〈110〉 directions caused by the miscut toward (111)A.
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