The effects of embedding transistor compound pairs in resistive networks†

Abstract

The problem of using active semiconductor devices in resistive two-port networks is discussed. A new method of assessing the significance of variations of parameters of active devices due to batch variation or thermal effects under these conditions is presented. Examples of the use of the method are given for a single transistor and transistor pairs connected in a simple and complementary compound manner. The philosophy of approach is not, however, restricted in the sense of two-port networks and may well be applied to any n-port resistive network.