Abstract
Hall effect and Rutherford backscattering measurements have been used to study the electrical properties and lattice damage, respectively of C and Si implanted layers in GaAs. Implantations were performed at temperatures between 77 and 300 °K and at dose rates between .06 and 20 µa/cm2. Significant dose rate and temperature effects in the damage were observed. These are attributed to a strong annealing stage at ~300 °K. The defects which form during low temperature implantation do not anneal up through 800 °C and severly degrade the electron mobility. Room temperature 1013 cm-2 Si implants resulted in ~ 100% electrically active donors with complete mobility recovery after an 800 °C anneal.
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