Abstract
Ion current densities in focused-ion-beam (FIB) implantations are several orders of magnitude greater than those of conventional broad-beam implantations. The corresponding increase in dose rate during implantation is shown to affect parameters of interest in device fabrication. FIB and broad-beam Si implants into GaAs at energies from 70 to 280 keV and at doses from 3×1012 to 1014 cm−2 are characterized using secondary ion mass spectroscopy (SIMS) and Hall-effect measurements. Reduced straggle, decreased activation, and modified carrier profiles are observed for FIB implants, particularly at higher energies and doses. These effects are attributed to dose-rate-dependent lattice damage.
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