Abstract
A study was undertaken to investigate the influence of a copper barrier layer on gold thin-film metallizations. It was found that Au/Cu composite films form holes in gold films during annealing for 1 h in air at temperatures between 300 and 500 °C. These holes are partially filled with copper oxide (CuO). The copper underlays which have a small tendency towards oxidation do not prevent grain growth of gold during annealing. The gold films in as-deposited Au/Cu composite films have a (111) preferred orientation parallel to the substrate which is retained after annealing regardless of the annealing temperature. The density of holes in Au/Cu composite films stays nearly constant with annealing time, at 400 °C in air, while the area fraction of holes increases with annealing time in a near parabolic manner.
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