Abstract
High-purity aluminum samples were implanted with 35 keV then polarized in both -containing and -free electrolytes in order to ascertain corrosion behavior as a function of content in the oxide. Implant fluence between and cm−2 resulted in little or no localized attack. Implant fluences of and cm−2 resulted in significant pitting in a -free electrolyte with the severity scaling as a function of implant fluence. The low variability in the pitting behavior of the cm−2 sample suggests that this implant dosage results in a critical concentration in the oxide for pit nucleation. The passive current density decreased with increasing implant fluence. A space-charge effect is proposed to account for this phenomenon, although effects from defect interactions and possible oxide thickening are still under consideration. © 2004 The Electrochemical Society. All rights reserved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.