Abstract
High-purity aluminum samples were implanted with 35 keV then polarized in both -containing and -free electrolytes in order to ascertain corrosion behavior as a function of content in the oxide. Implant fluence between and cm−2 resulted in little or no localized attack. Implant fluences of and cm−2 resulted in significant pitting in a -free electrolyte with the severity scaling as a function of implant fluence. The low variability in the pitting behavior of the cm−2 sample suggests that this implant dosage results in a critical concentration in the oxide for pit nucleation. The passive current density decreased with increasing implant fluence. A space-charge effect is proposed to account for this phenomenon, although effects from defect interactions and possible oxide thickening are still under consideration. © 2004 The Electrochemical Society. All rights reserved.
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