The effects of chemical doping withF4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-modeltechnique

Abstract

We have studied the effects of p-type chemical doping withF4TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). Thetransmission-line-model technique using multi-probe CNFETs has been employedto investigate the effects of chemical doping on the channel resistance andcontact resistance. It has been found that chemical doping is effective in thereduction of the contact resistance as well as the channel resistance. The deviceperformances of top-gate CNFETs such as transconductance, on-resistance, andon/off ratio wereimproved by the F4TCNQ chemical doping on the access regions.