Abstract
Diluted magnetic semiconductor Ce doped Si films with p-type conduction by means of codoping of Al were fabricated with low-temperature molecular beam epitaxy. The uniformly distributed Ce as a magnetic ion is responsible for the disappearance of ferromagnetic nature. Therefore, the magnetotransport properties of the films were investigated if they have any p-f interaction between f electron in Ce and carrier in this DMS sample. The samples with lower carrier concentration (2×1019 cm−3 at 80 K) showed variable range hopping (VRH) conduction and VRH induced magnetoresistance (MR) was recognized. Samples with higher carrier concentration (7×1020 cm−3 at 80 K) showed a metallic conduction and a positive MR. The positive MR is attributed to the quantum correction on the conductivity due to the p-f exchange interaction induced spin splitting of the valence band.
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