Abstract
The behavior of silicon wafers in the starting state (after both irradiation with nitrogen ions and after nitrogen ion irradiation and the deposition of an 80-nm-thick carbon coating) has been investigated. Processing with nitrogen ions and the coating deposition result in both a significant shrinkage of the crack length around the indentations and their utter absence under low indenter loads. This phenomenon is due to the high level of compression stresses in the carbon coating; these stresses compensate for the tensile ones that show up through indentation. Combining nitrogen ion irradiation and the deposition of the coating makes a considerable increase in the microhardness and crack-growth resistance in silicon possible.
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